 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES * * * Super low noise figure & High associated gain NF = 0.9 dB TYP., Ga = 10 dB TYP. @ f = 12 GHz 6-pin super minimold package Gate width: Wg = 200m ORDERING INFORMATION Part Number NE429M01-T1 Package 6-pin super minimold Marking V72 Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face to perforation side of the tape Qty 3 kpcs/reel ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot Tch Tstg Ratings 4.0 -3.0 IDSS 100 125 125 -65 to +125 Unit V V mA A mW C C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P12254EJ3V0DS00 (3rd edition) Date Published November 1999 N CP(K) Printed in Japan The mark shows major revised points. (c) 1997, 1999 NE429M01 PIN CONNECTIONS (Top View) (Bottom View) Pin No. 1 Pin name Gate Source Source Drain Source Source V72 3 2 1 4 5 6 4 5 6 3 2 1 2 3 4 5 6 RECOMMENDED OPERATING CONDITION (TA = +25 C) Parameter Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. 1 5 - TYP. 2 10 - MAX. 3 20 0 Unit V mA dBm ELECTRICAL CHARACTERISTICS (TA = +25 C) Parameter Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Symbol IGSO IDSS VGS(off) gm NF Test Conditions VGS = -3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 A VDS = 2 V, ID = 10 mA f = 12 GHz f = 4 GHz Associated Gain Ga f = 12 GHz f = 4 GHz VDS = 2 V ID = 10 mA MIN. - 20 -0.2 45 - - 9.0 - TYP. 0.5 60 -0.7 60 0.9 0.4 10 15.0 MAX. 10 90 -2.0 - 1.2 - - - dB Unit A mA V mS dB 2 Data Sheet P12254EJ3V0DS00 NE429M01 TYPICAL CHARACTERISTICS (TA = +25 C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 Total Power Dissipation Ptot (mW) 80 Drain Current ID (mA) 200 VGS = 0 V 60 -0.2 V 40 -0.4 V 20 -0.6 V 150 100 50 0 50 100 150 200 250 0 1 2 3 4 5 Ambient Temperature TA (C) Drain to Source Voltage VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 24 VDS = 2 V Maximum Stable Gain MSG. (dB) Maximum Available Gain MAG. (dB) Forward Insertion Gain |S21S|2 (dB) MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY VDS = 2 V ID = 10 mA 20 MSG. 60 Drain Current ID (mA) 40 16 MAG. 12 |S21S|2 20 0 -2.0 -1.0 Gate to Source Voltage VGS (V) 0 8 4 1 2 4 6 8 10 14 20 30 Frequency f (GHz) Data Sheet P12254EJ3V0DS00 3 NE429M01 Gain Calculations MSG. = S21 S12 K= 1 + 2-S112-S222 2 S12S21 MAG. = S21 S12 (K K2 - 1) = S11 * S22 - S21 * S12 NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 20 VDS = 2 V ID = 10 mA 16 Associated Gain Ga (dB) Ga 2.0 Noise Figure NF (dB) 1.5 12 1.0 8 0.5 NF 0 1 2 4 6 8 10 14 4 0 20 30 Frequency f (GHz) 4 Data Sheet P12254EJ3V0DS00 NE429M01 S-PARAMETERS MAG. AND ANG. VDS = 2 V, ID = 10 mA FREQUENCY MHz 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 S11 MAG. 0.939 0.916 0.889 0.856 0.822 0.790 0.768 0.736 0.709 0.679 0.651 0.626 0.598 0.576 0.551 0.527 0.504 0.494 0.495 0.529 0.563 0.608 0.637 0.645 0.668 0.689 0.702 0.713 0.743 0.766 0.785 0.802 0.814 ANG. (deg.) -33.5 -42.1 -50.7 -58.1 -65.2 -71.6 -77.9 -84.2 -91.2 -99.0 -109.1 -120.5 -132.6 -144.9 -157.4 -169.6 177.7 163.6 149.1 134.8 120.1 106.2 95.3 86.6 78.8 70.0 63.1 57.1 51.9 46.1 41.7 37.4 34.3 MAG. 4.728 4.643 4.546 4.405 4.279 4.165 4.099 4.024 4.013 4.018 4.007 3.978 3.940 3.862 3.775 3.686 3.585 3.475 3.367 3.282 3.167 3.011 2.773 2.562 2.398 2.231 2.028 1.917 1.772 1.633 1.508 1.335 1.140 S21 ANG. (deg.) 146.1 138.0 130.0 122.7 115.1 108.4 102.2 95.9 89.3 82.5 74.7 66.7 58.6 50.2 42.3 34.2 25.6 17.8 9.4 0.5 -8.6 -18.5 -27.7 -35.9 -43.8 -52.3 -59.7 -66.9 -75.6 -83.4 -92.0 -101.3 -108.9 MAG. 0.040 0.049 0.055 0.062 0.066 0.071 0.075 0.080 0.082 0.086 0.091 0.097 0.099 0.097 0.100 0.102 0.101 0.101 0.098 0.096 0.095 0.092 0.085 0.079 0.072 0.073 0.072 0.067 0.065 0.064 0.063 0.059 0.053 S12 ANG. (deg.) 69.6 63.3 59.2 54.4 50.2 46.5 41.6 37.9 36.9 32.2 27.4 23.4 17.0 12.1 6.6 1.2 -6.1 -12.3 -16.5 -22.3 -30.6 -38.8 -46.3 -50.2 -54.7 -60.3 -71.7 -79.5 -81.8 -83.1 -90.1 -104.7 -106.3 MAG. 0.597 0.571 0.557 0.535 0.510 0.488 0.478 0.459 0.441 0.418 0.386 0.341 0.296 0.252 0.212 0.185 0.166 0.155 0.149 0.148 0.165 0.194 0.237 0.279 0.321 0.372 0.411 0.427 0.462 0.500 0.533 0.580 0.596 S22 ANG. (deg.) -22.6 -28.5 -34.1 -39.4 -44.7 -48.9 -53.8 -56.9 -61.0 -65.5 -71.9 -78.7 -86.2 -94.9 -106.2 -121.8 -139.1 -157.3 178.4 158.4 134.2 109.4 91.2 80.9 76.2 74.3 71.4 71.5 69.3 62.6 57.5 50.0 43.2 The information in this data is subject to change without notice. Data Sheet P12254EJ3V0DS00 5 NE429M01 AMP. PARAMETERS VDS = 2 V, ID = 10 mA FREQUENCY MHz 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 GUmax dB 24.65 22.98 21.55 20.08 18.83 17.83 17.25 16.50 16.04 15.60 15.16 14.69 14.24 13.77 13.31 12.90 12.48 12.14 11.87 11.84 11.79 11.74 11.37 10.86 10.64 10.41 9.90 9.61 9.51 9.35 9.17 8.77 7.76 14.49 13.54 13.01 12.56 12.51 12.42 12.27 11.68 11.00 10.73 10.56 10.19 10.00 10.05 9.90 9.97 9.96 8.62 GAmax dB |S21|2 dB 13.49 13.34 13.15 12.88 12.63 12.39 12.25 12.09 12.07 12.08 12.06 11.99 11.91 11.74 11.54 11.33 11.09 10.82 10.55 10.32 10.01 9.57 8.86 8.17 7.60 6.97 6.14 5.65 4.97 4.26 3.57 2.51 1.14 |S12|2 dB -28.05 -26.28 -25.19 -24.16 -23.67 -22.94 -22.49 -21.93 -21.76 -21.30 -20.81 -20.30 -20.13 -20.25 -20.01 -19.80 -19.91 -19.92 -20.15 -20.35 -20.42 -20.73 -21.43 -22.01 -22.90 -22.73 -22.83 -23.48 -23.75 -23.84 -23.99 -24.61 -25.57 0.28 0.34 0.38 0.45 0.53 0.59 0.63 0.69 0.73 0.77 0.80 0.82 0.87 0.94 0.99 1.03 1.10 1.15 1.21 1.22 1.21 1.23 1.34 1.48 1.59 1.53 1.53 1.60 1.53 1.49 1.41 1.36 1.66 K Delay ns 0.045 0.045 0.044 0.041 0.042 0.038 0.034 0.035 0.037 0.038 0.043 0.044 0.045 0.047 0.044 0.045 0.048 0.043 0.046 0.049 0.051 0.055 0.051 0.045 0.044 0.047 0.041 0.040 0.048 0.044 0.048 0.051 0.042 Mason's U dB 30.977 28.134 29.097 26.443 24.821 23.707 22.719 21.774 23.007 22.393 22.558 23.290 21.787 20.820 20.035 19.527 18.251 17.588 17.140 17.344 17.372 17.250 15.992 14.752 14.134 14.250 13.739 13.276 13.699 13.763 14.262 14.537 11.758 G1 dB 9.24 7.92 6.79 5.74 4.89 4.26 3.87 3.39 3.03 2.69 2.40 2.16 1.93 1.75 1.57 1.42 1.27 1.21 1.22 1.42 1.66 2.00 2.26 2.33 2.57 2.80 2.95 3.08 3.49 3.84 4.15 4.48 4.72 G2 DB 1.91 1.72 1.61 1.46 1.31 1.18 1.13 1.03 0.94 0.83 0.70 0.54 0.40 0.29 0.20 0.15 0.12 0.11 0.10 0.10 0.12 0.17 0.25 0.35 0.47 0.65 0.81 0.87 1.05 1.25 1.45 1.78 1.91 The information in this data is subject to change without notice. 6 Data Sheet P12254EJ3V0DS00 NE429M01 NOISE PARAMETERS VDS = 2 V, ID = 10 mA opt. MAG. 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 0.40 0.49 0.60 0.74 0.90 1.08 1.30 1.53 15.5 13.9 12.5 11.3 10.0 8.9 7.8 6.8 0.51 0.49 0.44 0.32 0.23 0.45 0.60 0.76 ANG. (deg.) 75 103 145 -162 -73 -5 42 78 0.18 0.11 0.06 0.06 0.16 0.36 0.58 0.68 Freq. (GHz) NFmin. (dB) Ga (dB) Rn/50 The information in this data is subject to change without notice. Data Sheet P12254EJ3V0DS00 7 NE429M01 PACKAGE DIMENSIONS 6 PIN SUPER MINIMOLD (UNIT: mm) 0.2 +0.1 -0 0.1 MIN. 0.15 +0.1 -0 1.25 0.1 2.1 0.1 0 to 0.1 0.65 1.3 0.65 0.7 0.9 0.1 2.0 0.2 8 Data Sheet P12254EJ3V0DS00 NE429M01 PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235 C or below Time: 30 seconds or less (at 210 C) Note Count: 3, Exposure limit: None Package peak temperature: 215 C or below Time: 40 seconds or less (at 200 C) Note Count: 3, Exposure limit: None Soldering bath temperature: 260 C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None Pin temperature: 300 C Time: 3 seconds or less (per side of device) Note Exposure limit: None Recommended Condition Symbol IR35-00-3 VPS VP15-00-3 Wave Soldering WS60-00-1 Partial Heating - Note After opening the dry pack, keep it in a place below 25 C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Data Sheet P12254EJ3V0DS00 9 NE429M01 [MEMO] 10 Data Sheet P12254EJ3V0DS00 NE429M01 [MEMO] Data Sheet P12254EJ3V0DS00 11 NE429M01 CAUTION The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. * The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8 |
Price & Availability of NE429M01
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |